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savantic semiconductor product specification silicon pnp power transistors 2SB861 description with to-220c package complement to type 2sd1138 applications low frequency power amplifier color tv vertical deflection output pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -6 v i c collector current -2 a i cp collector current-peak -5 a t a =25 1.8 p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -45~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB861 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma; r be = : -150 v v (br)ebo emitter-base breakdown votage i e =-5ma; i c =0 -6 v v cesat collector-emitter saturation voltage i c =-0.5 a;i b =-50m a -3.0 v v be base-emitter voltage i c =-50ma ; v ce =-4v -1.0 v i cbo collector cut-off current v cb =-120v; i e =0 -1 a h fe-1 dc current gain i c =-50ma ; v ce =-4v 60 200 h fe-2 dc current gain i c =-0.5a ; v ce =-10v 60 c ob output capacitance i e =0 ;v cb =-100v,f=1mhz 30 pf h fe-1 classifications b c 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SB861 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm)
savantic semiconductor product specification 4 silicon pnp power transistors 2SB861

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